Silicon Heterostructure Devices

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Description Table of Contents. Summary SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation.

Handbook of Semiconductor Manufacturing Technology.

Science and Technology, Second Edition. The Bookshelf application offers access: Offline Computer — Download Bookshelf software to your desktop so you can view your eBooks with or without Internet access. The country you have selected will result in the following: Product pricing will be adjusted to match the corresponding currency. The title will be removed from your cart because it is not available in this region. All procedures were done in a clean room class and substrate cleaning followed a RCA standard process [14] with electronic grade chemicals.

The polyaniline synthesis was carried out following the procedure described by of MacDiarmid et al [15]. Electrical contacts were deposited by vacuum thermal evaporation, with the device front contact made of a nm gold film and the back contact of a 40 nm aluminum film. The devices have an effective area of 3. The 60 Co irradiation source was a 'gamma-cell' Cobalt irradiator, from Radionics Labs at a dose rate of 0. Optical properties of polyaniline solution and thin films were previously studied [14] to assure the doping state of the polymer.

UV-visible solution and FTIR film spectra indicated that the polymer film is in the doped state[14,15,16], therefore forming a p-n heterojunction with silicon. The synthesis method and spin-coating of polyaniline on silicon using organic acids has demonstrated to yield excellent reproducibility of the heterojunction electrical characteristics.

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For the devices fabricated we obtain reverse breakdown voltages of Volts, reverse saturation current of 6 nA, rectifying ratio of 50, at 1 Volt and ideality factor of 1. These parameters values are important for sensor applications of the diode for spectrometry or dosimetry of high energy ionizing radiation. The main radiation effect on the device characteristic is a parallel shift in both forward and reverse bias regions, with no further sign of device degradation.

This is a consequence of ionizing radiation effects associated to electron-hole pair generation due to interaction of the radiation with the polymer structure.

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The effect of radiation on the heterojunction conductivity is attributed to changes in oxidation state of polyaniline during irradiation with g -radiation[13], but the precise mechanisms are under study. These results suggest that measurements requiring low doses under 2, Gy and high sensitivity could be done in the reversed bias mode, while higher doses over 2, Gy could be monitored in the forward bias condition, at expenses of some loss in sensitivity. The diodes were exposed to different gases and its electrical response measured as a function of exposure time.

Curve a represents the virgin diode, prior to vapor exposure. Curve b is the resulting I-V characteristic after one minute exposure to ammonia. Larger exposure time leads to larger positive voltage shifts, and we observed that the device response is highly sensitive and fast.

Electron donating gases like ammonia interacts with the polymer and reduces the carrier density of polyaniline film, towards a resistance increase. The responses of the device to trichloroethylene for 5 minutes curve c and nitric acid for 1 minute curve d are also presented. The responses are quite different from ammonia. The forward characteristic shifts negatively relative to curve a - D V as a function of exposure time, however the linear dependence with exposure time remains unchanged.

Here, protonic acids increase the carrier density of the polyaniline thin film and therefore decrease the resistance through the heterojunction. The polymer interaction with trichloroethylene vapors can be explained due to slow decomposition of trichloroethylene with subsequent formation of hydrocloridic acid under light action and in presence of the moisture. We are presently analyzing the sensor response to organic vapor compositions such as acetone, methanol, and a variety of other gases associated with combustion emission to unveil further applications of this device to contamination and environmental emission control.

In summary, a process to produce high quality polyaniline-silicon heterostructure diodes has been developed.